Document Center List of Standards on Other Semiconductor Devices
ICS Code 31.080.99
Return to ICS Index.Up to Level 2:
The following documents are a part of this series:
BSI:
- BS-EN-60747-15 - Semiconductor devices. Discrete devices
- BS-EN-60747-16-1 - Semiconductor devices
- BS-EN-60747-16-3 - Semiconductor devices
- BS-EN-60747-16-4 - Semiconductor devices
- BS-EN-60747-16-5 - Semiconductor devices
- BS-EN-62031 - LED modules for general lighting. Safety specifications
- BS-EN-62047-1 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-10 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-11 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-12 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-13 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-14 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-15 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-16 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-17 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-18 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-19 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-2 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-20 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-21 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-25 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-26 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-3 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-5 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-6 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-7 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62047-9 - Semiconductor devices. Micro-electromechanical devices
- BS-EN-62258-1 - Semiconductor die products
- BS-EN-62258-2 - Semiconductor die products
- BS-EN-62258-5 - Semiconductor die products
- BS-EN-62258-6 - Semiconductor die products
- BS-EN-62384 - D.C. or A.C. supplied electronic control gear for LED modules. Performance requirements
- BS-EN-62830-3 - Semiconductor devices. Semiconductor devices for energy harvesting and generation
- BS-EN-IEC-60747-16-6 - Semiconductor devices
- BS-EN-IEC-60747-16-7 - Semiconductor devices
- BS-EN-IEC-60747-16-8 - Semiconductor devices
- BS-EN-IEC-60747-17 - Semiconductor devices
- BS-EN-IEC-60904-4 - Photovoltaic devices
- BS-EN-IEC-62031 - LED modules for general lighting. Safety specifications
- BS-EN-IEC-62384 - DC or AC supplied electronic controlgear for LED modules. Performance requirements
- BS-EN-IEC-62969-1 - Semiconductor devices. Semiconductor interface for automotive vehicles
- BS-EN-IEC-62969-2 - Semiconductor devices. Semiconductor interface for automotive vehicles
- BS-EN-IEC-62969-3 - Semiconductor devices. Semiconductor interface for automotive vehicles
- BS-EN-IEC-62969-4 - Semiconductor devices. Semiconductor interface for automotive vehicles
- BS-EN-IEC-63244-1 - Semiconductor devices. Semiconductor devices for wireless power transfer and charging
- BS-EN-IEC-63287-2 - Semiconductor devices. Guidelines for reliability qualification plans
- BS-EN-IEC-63364-1 - Semiconductor devices. Semiconductor devices for IoT system
- BS-EN-IEC-63373 - Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices
- BS-EN-ISO-21860 - Health Informatics. Reference standards portfolio (RSP). Clinical imaging
- BS-IEC-60747-14-3 - Semiconductor devices
- BS-IEC-60747-18-1 - Semiconductor devices
- BS-IEC-60747-18-3 - Semiconductor devices
- BS-IEC-60747-18-5 - Semiconductor devices
- BS-IEC-60747-19-1 - Semiconductor devices
- BS-IEC-60747-4-2 - Semiconductor devices. Discrete devices
- BS-IEC-60747-5-10 - Semiconductor devices
- BS-IEC-60747-5-11 - Semiconductor devices
- BS-IEC-60747-5-13 - Semiconductor devices
- BS-IEC-60747-5-15 - Semiconductor devices
- BS-IEC-60747-5-8 - Semiconductor devices
- BS-IEC-60747-5-9 - Semiconductor devices
- BS-IEC-62047-27 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-28 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-29 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-30 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-31 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-32 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-33 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-34 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-35 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-36 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-38 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-41 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-43 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-44 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-47 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62047-48 - Semiconductor devices. Micro-electromechanical devices
- BS-IEC-62830-1 - Semiconductor devices. Semiconductor devices for energy harvesting and generation
- BS-IEC-62830-2 - Semiconductor devices. Semiconductor devices for energy harvesting and generation
- BS-IEC-62830-3 - Semiconductor devices. Semiconductor devices for energy harvesting and generation. Vibration based electromagnetic energy harvesting
- BS-IEC-62830-4 - Semiconductor devices. Semiconductor devices for energy harvesting and generation
- BS-IEC-62830-5 - Semiconductor devices. Semiconductor devices for energy harvesting and generation
- BS-IEC-62830-6 - Semiconductor devices. Semiconductor devices for energy harvesting and generation
- BS-IEC-62830-7 - Semiconductor devices. Semiconductor devices for energy harvesting and generation
- BS-IEC-62830-8 - Semiconductor devices. Semiconductor devices for energy harvesting and generation
- BS-IEC-62951-1 - Semiconductor devices. Flexible and stretchable semiconductor devices
- BS-IEC-62951-2 - Semiconductor devices. Flexible and stretchable semiconductor devices
- BS-IEC-62951-3 - Semiconductor devices. Flexible and stretchable semiconductor devices
- BS-IEC-62951-4 - Semiconductor devices. Flexible and stretchable semiconductor devices
- BS-IEC-62951-5 - Semiconductor devices. Flexible and stretchable semiconductor devices
- BS-IEC-62951-6 - Semiconductor devices. Flexible and stretchable semiconductor devices
- BS-IEC-62951-7 - Semiconductor devices. Flexible and stretchable semiconductor devices
- BS-IEC-62951-8 - Semiconductor devices. Flexible and stretchable semiconductor devices
- BS-IEC-63068-1 - Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices
- BS-IEC-63068-2 - Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices
- BS-IEC-63068-3 - Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices
- BS-IEC-63068-4 - Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices
- BS-IEC-63150-1 - Semiconductor devices. Measurement and evaluation methods of kinetic energy harvesting devices under practical vibration environment
- BS-IEC-63229 - Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
- BS-IEC-63284 - Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors
- PD-CLC-62258-3 - Semiconductor die products
- PD-CLC-62258-4 - Semiconductor die products
- PD-ES-59008-4-2 - Data requirements for semiconductor die. Specific requirements and recommendations
- PD-IEC-60747-19-2 - Semiconductor devices
- PD-IEC-62258-3 - Semiconductor Die Products, Recommendations for Good Practice in Handling, Packing & S
- PD-IEC-62258-4 - Semiconductor die products
- PD-IEC-62258-7 - Semiconductor die products
- PD-IEC-62258-8 - Semiconductor die products
IEC:
- IEC-60050-523 - International Electrotechnical Vocabulary (IEV) - Part 523: Micro-electromechanical devices
- IEC-60050-523-AM1 - Amendment 1 - International Electrotechnical Vocabulary (IEV) - Part 523: Micro-electromechanical systems (MEMS)
- IEC-60146-2 - Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
- IEC-60747-14-2 - Semiconductor devices - Part 14-2: Semiconductor sensors - Hall elements
- IEC-60747-14-3 - Semiconductor devices - Part 14-3: Semiconductor sensors - Pressure sensors
- IEC-60747-15 - Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
- IEC-60747-16-1 - Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers
- IEC-60747-16-1-1 - Amendment 1 - Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers
- IEC-60747-16-1-2 - Amendment 2 - Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers
- IEC-60747-16-3 - Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters
- IEC-60747-16-3/A1 - Amendment 1 - Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters
- IEC-60747-16-3-AM2 - Amendment 2 - Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters
- IEC-60747-16-4 - Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches
- IEC-60747-16-4/A1 - Amendment 1 - Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches
- IEC-60747-16-4-AM2 - Amendment 2 - Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches
- IEC-60747-16-5 - Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators
- IEC-60747-16-5-AM1 - Amendment 1 - Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators
- IEC-60747-16-6 - Semiconductor devices - Part 16-6: Microwave integrated circuits - Frequency multipliers
- IEC-60747-16-7 - Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators
- IEC-60747-16-8 - Semiconductor devices - Part 16-8: Microwave integrated circuits - Limiters
- IEC-60747-17 - Semiconductor devices - Part 17: Magnetic and capacitive coupler for basic and reinforced insulation
- IEC-60747-18-1 - Semiconductor devices - Part 18-1: Semiconductor bio sensors - Test method and data analysis for calibration of lens-free CMOS photonic array sensors
- IEC-60747-18-3 - Semiconductor devices - Part 18-3: Semiconductor bio sensors - Fluid flow characteristics of lens-free CMOS photonic array sensor package modules with fluidic system
- IEC-60747-18-4 - Semiconductor devices - Part 18-4: Semiconductor bio sensors - Evaluation method of noise characteristics of lens-free CMOS photonic array sensors
- IEC-60747-18-5 - Semiconductor devices - Part 18-5: Semiconductor bio sensors - Evaluation method for light responsivity characteristics of lens-free CMOS photonic array sensor package modules by incident angle of light
- IEC-60747-19-1 - Semiconductor devices . Part 19-1: Smart sensors . Control scheme of smart sensors
- IEC-60747-19-2 - Semiconductor devices - Part 19-2: Smart sensors - Indication of specifications of sensors and power supplies to drive smart sensors for low power operation
- IEC-60747-5-10 - Semiconductor devices - Part 5-10: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the room-temperature reference point
- IEC-60747-5-11 - Semiconductor devices - Part 5-11: Optoelectronic devices - Light emitting diodes - Test method of radiative and nonradiative currents of light emitting diodes
- IEC-60747-5-12 - Semiconductor devices - Part 5-12: Optoelectronic devices - Light emitting diodes - Test method of LED efficiencies
- IEC-60747-5-1-2 - Amendment 2
- IEC-60747-5-13 - Semiconductor devices - Part 5-13: Optoelectronic devices - Hydrogen sulphide corrosion test for LED packages
- IEC-60747-5-14 - Semiconductor devices - Part 5-14: Optoelectronic devices - Light emitting diodes - Test method of the surface temperature based on the thermoreflectance method
- IEC-60747-5-15 - Semiconductor devices - Part 5-15: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage based on the electroreflectance spectroscopy
- IEC-60747-5-16 - Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
- IEC-60747-5-2 - Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices - Essential ratings and characteristics
- IEC-60747-5-2-1 - Amendment 1
- IEC-60747-5-3 - Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods
- IEC-60747-5-3-1 - Amendment 1
- IEC-60747-5-6 - Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
- IEC-60747-5-7 - Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
- IEC-60747-5-8 - Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
- IEC-60747-5-9 - Semiconductor devices - Part 5-9: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
- IEC-61967-2 - Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz - Part 2: Measurement of radiated emissions - TEM cell and wideband TEM cell method
- IEC-62031 - LED modules for general lighting - Safety specifications
- IEC-62031-AM1 - Amendment 1 - LED modules for general lighting - Safety specifications
- IEC-62031-AM2 - Amendment 2 - LED modules for general lighting - Safety specifications
- IEC-62047-1 - Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
- IEC-62047-10 - Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
- IEC-62047-11 - Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
- IEC-62047-12 - Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
- IEC-62047-13 - Semiconductor devices - Micro-electromechanical devices - Part 13: Bend - and shear - type test methods of measuring adhesive strength for MEMS structures
- IEC-62047-14 - Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
- IEC-62047-15 - Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass
- IEC-62047-16 - Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
- IEC-62047-17 - Semiconductor devices - Micro-electromechanical devices - Part 17: Bulge test method for measuring mechanical properties of thin films
- IEC-62047-18 - Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
- IEC-62047-19 - Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
- IEC-62047-2 - Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
- IEC-62047-20 - Semiconductor devices - Micro-electromechanical devices - Part 20: Gyroscopes
- IEC-62047-21 - Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
- IEC-62047-22 - Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates
- IEC-62047-25 - Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
- IEC-62047-26 - Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures
- IEC-62047-27 - Semiconductor devices - Micro-electromechanical devices - Part 27: Bond strength test for glass frit bonded structures using micro-chevron-tests (MCT)
- IEC-62047-28 - Semiconductor devices - Micro-electromechanical devices - Part 28: Performance testing method of vibration-driven MEMS electret energy harvesting devices
- IEC-62047-29 - Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin-films under room temperature
- IEC-62047-3 - Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile testing
- IEC-62047-30 - Semiconductor devices - Micro-electromechanical devices - Part 30: Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film
- IEC-62047-31 - Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials
- IEC-62047-32 - Semiconductor devices - Micro-electromechanical devices - Part 32: Test method for the nonlinear vibration of MEMS resonators
- IEC-62047-33 - Semiconductor devices - Micro-electromechanical devices - Part 33: MEMS piezoresistive pressure-sensitive device
- IEC-62047-34 - Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer
- IEC-62047-35 - Semiconductor devices . Micro-electromechanical devices - Part 35: Test method of electrical characteristics under bending deformation for flexible electro-mechanical devices
- IEC-62047-36 - Semiconductor devices . Micro-electromechanical devices . Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric thin films
- IEC-62047-37 - Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application
- IEC-62047-38 - Semiconductor devices - Micro-electromechanical devices - Part 38: Test method for adhesion strength of metal powder paste in MEMS interconnection
- IEC-62047-4 - Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
- IEC-62047-40 - Semiconductor devices - Micro-electromechanical devices - Part 40:Test methods of micro-electromechanical inertial shock switch threshold
- IEC-62047-41 - Semiconductor devices - Micro-electromechanical devices - Part 41: RF MEMS circulators and isolators
- IEC-62047-42 - Semiconductor devices - Micro-electromechanical devices - Part 42: Measurement methods of electro-mechanical conversion characteristics of piezoelectric MEMS cantilever
- IEC-62047-43 - Semiconductor devices - Micro-electromechanical devices - Part 43: Test method of electrical characteristics after cyclic bending deformation for flexible micro-electromechanical devices
- IEC-62047-44 - Semiconductor devices - Micro-electromechanical devices - Part 44: Test methods for dynamic performances of MEMS resonant electric-field-sensitive devices
- IEC-62047-47 - Semiconductor devices - Micro-electromechanical devices - Part 47: Silicon based MEMS fabrication technology - Measurement method of bending strength of microstructures
- IEC-62047-5 - Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches
- IEC-62047-6 - Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
- IEC-62047-7 - Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection
- IEC-62047-8 - Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films
- IEC-62047-9 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
- IEC-62258-1 - Semiconductor die products - Part 1: Procurement and use
- IEC-62258-2 - Semiconductor die products - Part 2: Exchange data formats
- IEC-62258-3 - Semiconductor die products - Part 3: Recommendations for good practice in handling, packing and storage
- IEC-62258-4 - Semiconductor die products - Part 4: Questionnaire for die users and suppliers
- IEC-62258-5 - Semiconductor die products - Part 5: Requirements for information concerning electrical simulation
- IEC-62258-6 - Semiconductor die products - Part 6: Requirements for information concerning thermal simulation
- IEC-62258-7 - Semiconductor die products - Part 7: XML schema for data exchange
- IEC-62258-8 - Semiconductor die products - Part 8: EXPRESS model schema for data exchange
- IEC-62384 - DC or AC supplied electronic controlgear for LED modules - Performance requirements
- IEC-62384/A1 - Amendment 1 - DC or AC supplied electronic control gear for LED modules - Performance requirements
- IEC-62384-RL - DC or AC supplied electronic controlgear for LED modules - Performance requirements
- IEC-62830-1 - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 1: Vibration based piezoelectric energy harvesting
- IEC-62830-2 - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
- IEC-62830-3 - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting
- IEC-62830-4 - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 4: Test and evaluation methods for flexible piezoelectric energy harvesting devices
- IEC-62830-6 - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
- IEC-62830-7 - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 7: Linear sliding mode triboelectric energy harvesting
- IEC-62830-8 - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 8: Test and evaluation methods of flexible and stretchable supercapacitors for use in low power electronics
- IEC-62951-1 - Semiconductor devices - Flexible and stretchable semiconductor devices - Part 1: Bending test method for conductive thin films on flexible substrates
- IEC-62951-2 - Semiconductor devices - Flexible and stretchable semiconductor devices - Part 2: Evaluation method for electron mobility, sub-threshold swing and threshold voltage of flexible devices
- IEC-62951-3 - Semiconductor devices - Flexible and stretchable semiconductor devices - Part 3: Evaluation of thin film transistor characteristics on flexible substrates under bulging
- IEC-62951-4 - Semiconductor devices - Flexible and stretchable semiconductor devices - Part 4: Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices
- IEC-62951-5 - Semiconductor devices - Flexible and stretchable semiconductor devices - Part 5: Test method for thermal characteristics of flexible materials
- IEC-62951-6 - Semiconductor devices - Flexible and stretchable semiconductor devices - Part 6: Test method for sheet resistance of flexible conducting films
- IEC-62951-7 - Semiconductor devices - Flexible and stretchable semiconductor devices - Part 7: Test method for characterizing the barrier performance of thin film encapsulation for flexible organic semiconductor
- IEC-62951-8 - Semiconductor devices - Flexible and stretchable semiconductor devices - Part 8: Test method for stretchability, flexibility, and stability of flexible resistive memory
- IEC-62951-9 - Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
- IEC-62969-1 - Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors
- IEC-62969-2 - Semiconductor devices - Semiconductor interface for automotive vehicles - Part 2: Efficiency evaluation methods of wireless power transmission using resonance for automotive vehicles sensors
- IEC-62969-3 - Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
- IEC-62969-4 - Semiconductor devices - Semiconductor interface for automotive vehicles - Part 4: Evaluation method of data interface for automotive vehicle sensors
- IEC-63068-1 - Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
- IEC-63068-2 - Semiconductor devices . Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
- IEC-63068-3 - Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
- IEC-63068-4 - Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
- IEC-63150-1 - Semiconductor devices - Measurement and evaluation methods of kinetic energy harvesting devices under practical vibration environment - Part 1: Arbitrary and random mechanical vibrations
- IEC-63229 - Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
- IEC-63244-1 - Semiconductor devices - Semiconductor devices for wireless power transfer and charging - Part 1: General requirements and specifications
- IEC-63357 - Semiconductor devices - Standardization roadmap of fault test method for automotive vehicles
- IEC-63364-1 - Semiconductor devices - Semiconductor devices for IoT system - Part 1: Test method of sound variation detection
- IEC-63373 - Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices
- IEC/PAS-60747-17 - Semiconductor devices - Discrete devices - Part 17: Magnetic and capacitive coupler for basic and reinforced isolation
Other SDOs:
- EN-60747-15 - Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
- EN-60747-16-1 - Discrete Semiconductor Devices & Integrated Circuits, Microwave Integrated Circuits, A
- EN-60747-16-3 - Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters
- EN-60747-16-4 - Discrete Semiconductor Devices, Microwave Integrated Circuits, Switches
- EN-60747-16-5 - Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators
- EN-62031 - LED modules for general lighting - Safety specifications
- EN-62047-1 - Semiconductor devices - Micro-electromechanical devices - Part 1: Terms and definitions
- EN-62047-10 - Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
- EN-62047-11 - Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
- EN-62047-12 - Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
- EN-62047-13 - Semiconductor devices - Micro-electromechanical devices - Part 13: Bend- and shear- type test methods of measuring adhesive strength for MEMS structures
- EN-62047-14 - Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
- EN-62047-15 - Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass
- EN-62047-16 - Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films GÇô Wafer curvature and cantilever beam deflection methods
- EN-62047-17 - Semiconductor devices - Micro-electromechanical devices - Part 17: Bulge test method for measuring mechanical properties of thin films
- EN-62047-18 - Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
- EN-62047-19 - Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
- EN-62047-2 - Semiconductor Devices, Micro-Electromechanical Devices, Tensile Testing Method of Thin
- EN-62047-20 - Semiconductor devices - Micro-electromechanical devices - Part 20: Gyroscope
- EN-62047-21 - Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
- EN-62047-25 - Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
- EN-62047-26 - Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures
- EN-62047-3 - Semiconductor Devices, Micro-Electromechanical Devices, Thin Film Standard Test Piece
- EN-62047-5 - Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches
- EN-62047-6 - Part 6: Axial Fatigue Testing Methods of Thin Film Materials, Semiconductor Devices -
- EN-62047-7 - Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection
- EN-62047-8 - Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films
- EN-62047-9 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
- EN-62258-2 - Semiconductor die products - Part 2: Exchange data formats
- EN-62258-5 - Semiconductor Die Products, Requirements for Information Concerning Electrical Simulat
- EN-62258-6 - Semiconductor Die Products, Requirements for Information Concerning Thermal Simulation
- EN-62384 - Dc or Ac Supplied Electronic Control Gear for Led Modules - Performance Requirements
- EN-IEC-62969-1 - Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors
- EN-IEC-62969-2 - Semiconductor devices - Semiconductor interface for automotive vehicles - Part 2: Efficiency evaluation methods of wireless power transmission using resonance for automotive vehicles sensors
- EN-IEC-62969-3 - Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
- EN-IEC-62969-4 - Semiconductor devices - Semiconductor interface for automotive vehicles - Part 4: Evaluation method of data interface for automotive vehicle sensors