IEC-63068-3 › Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
IEC-63068-3
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EDITION 1.0
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CURRENT
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IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
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31.080.99 (Other semiconductor devices)
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Document Number
IEC 63068-3 Ed. 1.0 b:2020
Revision Level
EDITION 1.0
Status
Current
Publication Date
July 1, 2020
Committee Number
47