IEC-62047-9 › Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
IEC-62047-9
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EDITION 1.0
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CURRENT
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Included in this current edition are the following subparts:
EDITION 1.0 - July 1, 2011
ED. 1.0 CORRIGENDUM 1 - March 1, 2012
ED. 1.0 CORRIGENDUM 1 - March 1, 2012
IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters.
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31.080.99 (Other semiconductor devices)
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Document Number
IEC 62047-9 Ed. 1.0 b:2011
Revision Level
EDITION 1.0
Status
Current
Publication Date
July 1, 2011
Committee Number
47F