IEC-63068-1 › Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
IEC-63068-1
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EDITION 1.0
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CURRENT
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IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
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31.080.99 (Other semiconductor devices)
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Document Number
IEC 63068-1 Ed. 1.0 en:2019
Revision Level
EDITION 1.0
Status
Current
Publication Date
Jan. 1, 2019
Committee Number
47