Document Center List of Standards on Transistors
ICS Code 31.080.30
Return to ICS Index.Up to Level 2:
The following documents are a part of this series:
ASTM:
- ASTM-F1096 - Method for Measuring Mosfet Saturated Threshold Voltage (Withdrawn 1992)
- ASTM-F1340 - Test Method for Determining the Mean Interface Trap Density of Mosfets by Charge-Pumping (Withdrawn 1997)
- ASTM-F528 - Standard Test Method of Measurement of Common-Emitter D-C Current Gain of Junction Transistors (Withdrawn 2011)
- ASTM-F570 - Test Method for Transistor Collector-Emitter Saturation Voltage (Withdrawn 1995)
- ASTM-F616 - Standard Test Method for Measuring MOSFET Drain Leakage Current
- ASTM-F617 - Standard Test Method for Measuring MOSFET Linear Threshold Voltage (Withdrawn 2006)
- ASTM-F632 - Test Method for Measuring Small-Signal Comon Emitter Current Gain of Transistors at High Frequencies (Withdrawn 1995)
- ASTM-F769 - Standard Test Method for Measuring Transistor and Diode Leakage Currents (Withdrawn 2006)
- ASTM-F815 - Test Method for Detection of Epitaxial Spikes (Withdrawn 1999)
- ASTM-F996 - Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics (Withdrawn 2023)
BSI:
- BS-9364-N007-&-N009 - Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
- BS-9364-N008-&-N010 - Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
- BS-9364-N011 - Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
- BS-9364-N012 - Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
- BS-9364-N013 - Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
- BS-9364-N016 - Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
- BS-9364-N017 - Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
- BS-EN-150003 - Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for low frequency amplification
- BS-EN-150004 - Specification for harmonized system of quality assessment for electronic components. Blank detail specification: bipolar transistors for switching applications
- BS-EN-150007 - Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for high frequency amplification
- BS-EN-150012 - Specification for harmonized system of quality assessment for electronic components. Blank detail specification: single gate field-effect transistors
- BS-EN-62373 - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
- BS-EN-62416 - Semiconductor devices. Hot carrier test on MOS transistors
- BS-EN-62417 - Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
- BS-IEC-60747-4 - Semiconductor devices. Discrete devices
- BS-IEC-60747-4-1 - Semiconductor devices. Discrete devices
- BS-IEC-60747-7 - Semiconductor devices. Discrete devices
- BS-IEC-60747-7-5 - Semiconductor devices. Discrete devices
- BS-IEC-60747-8 - Semiconductor devices. Discrete devices
- BS-IEC-60747-8-4 - Discrete semiconductor devices
- BS-IEC-60747-9 - Semiconductor devices
- BS-IEC-62899-503-1 - Printed electronics
- BS-IEC-63275-1 - Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors
- BS-IEC-63284 - Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors
- BS-QC-750102 - Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Ambient-rated bipolar transistors for low and high-frequency amplification
- BS-QC-750103 - Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification
- BS-QC-750104 - Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bipolar transistors for switching applications
- BS-QC-750107 - Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for high-frequency amplifications
- BS-QC-750112 - Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz
IEC:
- IEC-60747-4 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
- IEC-60747-4-1 - Part 4-1: Microwave Diodes & Transistors - Microwave Field Effect Transistors - Blank Deta
- IEC-60747-4-2 - Part 4-2: Microwave Diodes & Transistors - Integrated-Circuit Microwave Amplifiers - Blank
- IEC-60747-4-AM1 - Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
- IEC-60747-7 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
- IEC-60747-7-5 - Part 7-5: Bipolar Transistors for Power Switching Applications, Semiconductor Devices
- IEC-60747-7-AM1 - Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
- IEC-60747-8 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
- IEC-60747-8-4 - Part 8-4: Metal-Oxide-Semiconductor Field-Effect Transistors(Mosfets) for Power Switching
- IEC-60747-8-AM1 - Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
- IEC-60747-9 - Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
- IEC-62373-1 - Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
- IEC-62899-503-1 - Printed electronics - Part 503-1: Quality assessment - Test method of displacement current measurement for printed thin-film transistor
- IEC-62899-503-3 - Printed electronics - Part 503-3: Quality assessment - Measuring method of contact resistance for the printed thin film transistor - Transfer length method
- IEC-63275-1 - Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
- IEC-63275-2 - Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
- IEC-63284 - Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
Other SDOs:
- EN-62373 - Bias-Temperature Stability Test for Metal-Oxide, Semiconductor, Field-Effect Transisto
- EN-62416 - Semiconductor Devices - Hot Carrier Test on Mos Transistors
- EN-62417 - Semiconductor Devices - Mobile Ion Tests for Metal-Oxide Semiconductor Field Effect Tr