BS-IEC-63275-1 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors

BS-IEC-63275-1 - 2022 EDITION - CURRENT


Document Center Inc. is an authorized dealer of BSI standards.
The following bibliographic material is provided to assist you with your purchasing decision:

Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors

Keywords

Semiconductor technology;Semiconductor devices;Semiconductors;Diode transistor logic circuits;Transistor transistor logic circuits

To find similar documents by classification:

31.080.30 (Transistors)

This document comes with our free Notification Service, good for the life of the document.

This document is available in either Paper or PDF format.

ORDER

Price:

$179.40        


Want this as a site license?



Document Number

BS IEC 63275-1:2022

Revision Level

2022 EDITION

Status

Current

Publication Date

Oct. 5, 2022

Page Count

16

ISBN

9780539121261

International Equivalent

IEC 63275-1 Ed.1.0

Committee Number

EPL/47