IEC-62373-1 › Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

IEC-62373-1 - EDITION 1.0 - CURRENT


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IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.
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Document Number

IEC 62373-1 Ed. 1.0 b:2020

Revision Level

EDITION 1.0

Status

Current

Publication Date

July 1, 2020

Committee Number

47