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Scope

1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current.

Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.

1.2 The test method is applicable to all enhancement-mode and depletion-mode MOSFETs. The test method specifies positive voltage and current, conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p-channel MOSFETs.

1.3 This d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage.

1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

Current measurement-semiconductors; Design-electronic components; Electrical conductors-semiconductors; Electrical measurements; Integrated circuits; Leak testing-electron devices; MOSFETs; MOSFET drain leakage current, test; ICS Number Code 31.080.30 (Transistors)

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31.080.30 (Transistors)

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