IEC-63275-1 › Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

IEC-63275-1 - EDITION 1.0 - CURRENT


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IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
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Document Number

IEC 63275-1 Ed. 1.0 b:2022

Revision Level

EDITION 1.0

Status

Current

Publication Date

April 1, 2022

Committee Number

47