IEC-63275-2 › Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

IEC-63275-2 - EDITION 1.0 - CURRENT


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IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
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Document Number

IEC 63275-2 Ed. 1.0 b:2022

Revision Level

EDITION 1.0

Status

Current

Publication Date

May 1, 2022

Committee Number

47