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Scope

1.1 This test method covers the detection of epitaxial spikes on silicon wafers. It is applicable to any wafer diameter or surface orientation.

1.2 This test method is a pass or fail test for the presence of spikes on a wafer. If there are relatively few spikes and they are not close together the test method can also be used to count spikes.

1.3 For purposes of this test method, a detectable spike is one with a nominal height of 4 [mu]m or more.

1.4 This test method does not have the ability to measure spike heights.

1.5 This test method is ordinarily nondestructive but its use may require subsequent cleaning of the tested wafers.

1.6 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

Epitaxial spikes; Nondestructive evaluation (NDE)-semiconductors; Pass-fail test; Visual examination-electronic components/devices; epitaxial spike detection on silicon wafers, pass-fail test,; Silicon-semiconductor applications; wafers-epitaxial spike detection, test; ICS Number Code 31.080.30 (Transistors)

To find similar documents by classification:

31.080.30 (Transistors)

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