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Scope

1.1 This test method covers the measurement of leakage currents of transistors and diodes. Electronic devices exposed to ionizing radiation may show increases in leakage current as the accumlated total dose rises.

1.2 These procedures are intended for the measurement of currents in the range from 10 ^-11 to 10 ^-3 A.

1.3 This test method may be used with either a virtual-ground current meter or a resistance-shunt current meter.

1.4 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this test method.

1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

diode; junction leakage; leakage current; radiation testing; total radiation dose; transistor; ICS Number Code 31.080.10 (Diodes); 31.080.30 (Transistors)

To find similar documents by ASTM Volume:

10.04 (Electronics; Declarable Substances in Materials; 3D Imaging Systems)

To find similar documents by classification:

31.080.10 (Diodes)

31.080.30 (Transistors)

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