IEC-63284 › Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

IEC-63284 - EDITION 1.0 - CURRENT


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IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress
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Document Number

IEC 63284 Ed. 1.0 b:2022

Revision Level

EDITION 1.0

Status

Current

Publication Date

April 1, 2022

Committee Number

47